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Proceedings Paper

Measurement and analysis of reticle and wafer level contributions to total CD variation
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Paper Abstract

The impact of reticle critical dimension (CD) variations on wafer level CD performance has been growing with the trend towards sub-wavelength lithography. Reticle manufacturing, CD specifications and qualification procedures must now take into account the details of the wafer fab exposure and process conditions as well as the mask process. The entire pattern transfer procedure, from design to reticle to wafer to electrical results, must be viewed as a system engineering problem. In this paper we show how hardware and software tools, procedures, and analysis techniques are being developed to support the demanding requirements of the pattern transfer process in the era of 0.13 micron lithography.

Paper Details

Date Published: 20 October 2000
PDF: 9 pages
Proc. SPIE 4226, Microlithographic Techniques in Integrated Circuit Fabrication II, (20 October 2000); doi: 10.1117/12.404840
Show Author Affiliations
Moshe E. Preil, KLA-Tencor Corp. (United States)
Chris A. Mack, FINLE Technologies, Inc., a Division of KLA-Tencor (United States)


Published in SPIE Proceedings Vol. 4226:
Microlithographic Techniques in Integrated Circuit Fabrication II
Chris A. Mack; XiaoCong Yuan, Editor(s)

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