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Proceedings Paper

Prospects of amorphous-silicon-based photonic networks
Author(s): Charles M. Fortmann; Enrique L. Jaen; Nobuhiro Hata
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Paper Abstract

The prospects for a thin film amorphous silicon based integrated photonic technology spanning materials, devices, and physics are described. Impurity implantation is an effective technique for the preparation of permanent refractive index patterning due to the very high solubility limits of the amorphous phase. Methods of preparing films of the requisite thickness and smoothness for photonic application have been identified. Other experiments suggest that there is a light induced refractive index change of sufficient magnitude for patterning light adaptive and/or light defined optical elements. Two light induced refractive index changes, one fast and one slow, were observed in amorphous silicon materials. These changes were observed over temperatures ranging from room temperature to 250 degree(s)C and do not appear to diminish with increasing temperature over this range. Simulations were used to elucidate the physics of light induced change. Several classes of thin film devices were developed which span a wide range of functionality.

Paper Details

Date Published: 19 October 2000
PDF: 9 pages
Proc. SPIE 4110, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications VI, (19 October 2000); doi: 10.1117/12.404781
Show Author Affiliations
Charles M. Fortmann, SUNY/Stony Brook (United States)
Enrique L. Jaen, SUNY/Stony Brook (United States)
Nobuhiro Hata, Electrotechnical Lab. (Japan)


Published in SPIE Proceedings Vol. 4110:
Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications VI
Shizhuo Yin; Francis T. S. Yu, Editor(s)

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