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Proceedings Paper

In-situ annealing during the growth of relaxed SiGe
Author(s): Daizong Li; Changjun Huang; Buwen Cheng; Hongjie Wang; Zhuo Yu; Chunhui Zhang; Jinzhong Yu; Qiming Wang
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Paper Abstract

In this paper, a graded Si1-xGex buffer and thereafter the Si0.8Ge0.2 uniform layer were grown at a little lower temperature to keep the surface smooth, which will provide the gliding dislocations a wider channel and less low energy nucleation sites on the surface. Therefore, the dislocation density may be reduced. However, the motion of the existing threading dislocations cannot retain equilibrium at lower temperature, strain will accumulate and be in favor of the nucleation of dislocation. In situ annealing was used to reduce the residual strain in the sample during the low-temperature growth of SiGe. A fully relaxed Si0.8Ge0.2 layer was obtained with the surface dislocation dnesity of 3x105cm-2.

Paper Details

Date Published: 19 October 2000
PDF: 7 pages
Proc. SPIE 4094, Optical and Infrared Thin Films, (19 October 2000); doi: 10.1117/12.404751
Show Author Affiliations
Daizong Li, Institute of Semiconductors (China)
Changjun Huang, Institute of Semiconductors (China)
Buwen Cheng, Institute of Semiconductors (China)
Hongjie Wang, Institute of Semiconductors (China)
Zhuo Yu, Institute of Semiconductors (China)
Chunhui Zhang, Institute of Semiconductors (China)
Jinzhong Yu, Institute of Semiconductors (China)
Qiming Wang, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 4094:
Optical and Infrared Thin Films
Michael L. Fulton, Editor(s)

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