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Proceedings Paper

Characterization of Si-on-insulator buried layers by FTIR and scatterometry
Author(s): Victor A. Yakovlev; Sylvie Bosch-Charpenay; Peter A. Rosenthal; Peter R. Solomon; Jiazhan Xu; John C. Stover; Maria J. Anc; Michael L. Alles
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Paper Abstract

Non-destructive uniformity and defect control is an essential requirement for yield performance improvement and cost reduction of Silicon-on-Insulator (SOI) materials. To maximize performance and minimize production costs, it is critical to maintain a tight control over the oxygen implant dose. This has proven to be particularly true for the most advanced low dose SIMOX processes. Advanced FTIR reflectance spectroscopy and scatterometry have been used to characterize the buried layers of SOI materials and to relate unambiguously the process dose variations and corresponding changes of IR reflectance spectra.

Paper Details

Date Published: 11 October 2000
PDF: 8 pages
Proc. SPIE 4103, Optical Diagnostic Methods for Inorganic Materials II, (11 October 2000); doi: 10.1117/12.403575
Show Author Affiliations
Victor A. Yakovlev, On-Line Technologies Inc. (United States)
Sylvie Bosch-Charpenay, On-Line Technologies Inc. (United States)
Peter A. Rosenthal, On-Line Technologies Inc. (United States)
Peter R. Solomon, On-Line Technologies Inc. (United States)
Jiazhan Xu, On-Line Technologies Inc. (United States)
John C. Stover, ADE Corp. (United States)
Maria J. Anc, Ibis Technology Corp. (United States)
Michael L. Alles, Ibis Technology Corp. (United States)

Published in SPIE Proceedings Vol. 4103:
Optical Diagnostic Methods for Inorganic Materials II
Leonard M. Hanssen, Editor(s)

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