Share Email Print
cover

Proceedings Paper

Valency change of active and nonactive ions inside oxide single crystals applied in optoelectronic devices
Author(s): Slawomir Maksymilian Kaczmarek; Wojciech Paszkowicz; Ryszard Jablonski; Marek Berkowski; Miroslaw Kwasny; Marek Swirkowicz; Jolanta Wojtkowska
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Results of phase transition investigations of Nd:YVO4 single crystal to Nd:YVO4 single crystal in hydrogen at 1200 degrees C for 1h were presented. The refined lattice parameters obtained for the latter case, a0 equals 5.2858(1) angstrom, b0 equals 5.5956(2) angstrom and c0 equals 7.5854(2) angstrom, are slightly larger only than those of YVO3. Valency change was also investigated of Cr ions due to transition in Cr4+:Y3Al5O12 and Cr3+:SrLaGa3O7 Ho and Pr ions in LiTaO3 and Co3+ due to transition in LaGaO3 single crystals under influence of annealing in reducing and oxidizing atmospheres and gamma and proton irradiations.

Paper Details

Date Published: 4 October 2000
PDF: 8 pages
Proc. SPIE 4237, Laser Technology VI: Progress in Lasers, (4 October 2000); doi: 10.1117/12.402884
Show Author Affiliations
Slawomir Maksymilian Kaczmarek, Military Univ. of Technology (Poland)
Wojciech Paszkowicz, Institute of Physics (Poland)
Ryszard Jablonski, Institute of Electronic Materials Technology (Poland)
Marek Berkowski, Institute of Physics (Poland)
Miroslaw Kwasny, Military Univ. of Technology (Poland)
Marek Swirkowicz, Institute of Electronic Materials Technology (Poland)
Jolanta Wojtkowska, Soltan Institute of Nuclear Studies (Poland)


Published in SPIE Proceedings Vol. 4237:
Laser Technology VI: Progress in Lasers

© SPIE. Terms of Use
Back to Top