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Proceedings Paper

Optimization issues of AlGaAs/GaAs QW-SCH lasers intended for 808-nm range
Author(s): Andrzej Malag; Bohdan Mroziewicz; Anna Kozlowska; Wlodzimierz Strupinski; Lech Dobrzanski; Marian Teodorczyk; Sylwia Wrobel; Malgorzata Mozdzonek
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Paper Abstract

To meet the requirements for the narrow emission line of ht laser diode pumping system exactly at 808 nm wavelength, an optimization of the laser (AlGa)As heterostructure because of the composition and thickness of the constituent layers is necessary. In the paper the design principles, the characteristics of the manufactured laser diodes based on this design and intrinsic limitations of the possibility of 'tuning' the lasers to desired wavelength in the MOVPE growth process are presented.

Paper Details

Date Published: 4 October 2000
PDF: 4 pages
Proc. SPIE 4237, Laser Technology VI: Progress in Lasers, (4 October 2000); doi: 10.1117/12.402862
Show Author Affiliations
Andrzej Malag, Institute of Electronic Materials Technology (Poland)
Bohdan Mroziewicz, Institute of Electron Technology (Poland)
Anna Kozlowska, Institute of Electronic Materials Technology (Poland)
Wlodzimierz Strupinski, Institute of Electronic Materials Technology (Poland)
Lech Dobrzanski, Institute of Electronic Materials Technology (Poland)
Marian Teodorczyk, Institute of Electronic Materials Technology (Poland)
Sylwia Wrobel, Institute of Electronic Materials Technology (Poland)
Malgorzata Mozdzonek, Institute of Electronic Materials Technology (Poland)


Published in SPIE Proceedings Vol. 4237:
Laser Technology VI: Progress in Lasers
Wieslaw L. Wolinski; Zdzislaw Jankiewicz, Editor(s)

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