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Proceedings Paper

Passive Q-switches for diode-pumped laser resonators
Author(s): Zygmunt Mierczyk; Krzysztof Kopczynski; Zygmunt Frukacz
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Paper Abstract

The paper presents the results of investigations on spectroscopic properties of new non-linear absorbers used for diode-pumped laser systems: yttrium-aluminium garnet doped with trivalent vanadium ions and Te doped GaAs semiconductor absorber. In this work we present the result son YAG:V3+ single crystal growth and examination of Q-switching of laser resonator in near IR band. YAG single crystals doped with V3+ ions of different concentrations were obtained by the Czochralski method. The absorption and emission spectra measurements on those crystals are presented. The as grown crystals have not non- linear absorption bands of V3+ ions in tetrahedral positions. After crystals annealing in reducing atmosphere absorption bands in NIR region arise. The investigations of changes in transmission properties of YAG crystals with different concentrations of V3+ ions have been carried out as a function of power density of transmitted radiation at 822 nm, 1064 nm, and 1318 nm. Dependence of transmission changes of the GaAs:Te on power density of diagnostic radiation of 1064 nm have been determined. The following parameters of non-linear absorbers were estimated: non-active losses, absorption cross-section, saturation energy, concentration of active centers, relaxation time, and energy losses caused by absorber bleaching. Generation characteristics of YAG:Nd3+ laser with GaAs:Te and YAG:V3+ modulators have been investigated.

Paper Details

Date Published: 4 October 2000
PDF: 4 pages
Proc. SPIE 4237, Laser Technology VI: Progress in Lasers, (4 October 2000); doi: 10.1117/12.402850
Show Author Affiliations
Zygmunt Mierczyk, Military Univ. of Technology (Poland)
Krzysztof Kopczynski, Military Univ. of Technology (Poland)
Zygmunt Frukacz, Institute of Electronic Materials Technology (Poland)


Published in SPIE Proceedings Vol. 4237:
Laser Technology VI: Progress in Lasers
Wieslaw L. Wolinski; Zdzislaw Jankiewicz, Editor(s)

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