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Proceedings Paper

Feasibility study of a direct bonding technique for laser crystals
Author(s): Akira Sugiyama; Hiroyasu Fukuyama; Yohei Kataoka; Akihiko Nishimura; Yukikatsu Okada
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Paper Abstract

Direct bonding without the use of adhesives was demonstrated on Ti:sapphire laser crystals with a bonding surface of 12 mm x 6 mm and the bonded region was evaluated from the macroscopic to the atomic level by three different methods. Wavefront distortion caused by the bonded region of 10 mm x 5 mm was estimated at 0.031 wavelengths (λ) at 633 nm. Micro defect measurements by a laser tomography method showed that the number of micro defects on the bonded region were much smaller than that of the intrinsic ones inside the crystal. From a magnified inspection, atoms in the bonded region were well arranged with the same regularity as inside the crystal. In addition, micro defects 1 nm in size appeared slightly along the bonded interface where the titanium ion concentration was four times higher than other parts of the crystal.

Paper Details

Date Published: 6 October 2000
PDF: 8 pages
Proc. SPIE 4231, Advanced Optical Manufacturing and Testing Technology 2000, (6 October 2000); doi: 10.1117/12.402813
Show Author Affiliations
Akira Sugiyama, Japan Atomic Energy Research Institute (Japan)
Hiroyasu Fukuyama, Japan Atomic Energy Research Institute (Japan)
Yohei Kataoka, Kougaku Giken Co., Ltd. (Japan)
Akihiko Nishimura, Japan Atomic Energy Research Institute (Japan)
Yukikatsu Okada, Kougaku Giken Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 4231:
Advanced Optical Manufacturing and Testing Technology 2000
Li Yang; Harvey M. Pollicove; Qiming Xin; James C. Wyant, Editor(s)

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