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Proceedings Paper

Novel large-coupled optical cavity semiconductor lasers and multiactive region light-emitting diodes with high performance
Author(s): Guangdi Shen; Peng Lian; Xia Guo; Tao Yin; Changhua Chen; Guohong Wang; Jinyu Du; Bifeng Cui; Jianjun Li; Ying Liu; Guo Gao; Deshu Zou; Jianxing Chen; Xiaoyu Ma; Lianhui Chen
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Paper Abstract

Novel multi-active region semiconductor lasers with large coupled optical cavity and high quantum efficiency, and new mechanism tunneling-regenerated multi-active region light emitting diodes with high quantum efficiency and high brightness have been proposed and fabricated. The external and differential quantum efficiency are 2.9 and 3.0 W/A, and the output light power as high as approximately 5 W when the injecting current equals 2A for the four active region 980 nm strained InGaAs/GaAs QW lasers. The fundamental mode light output with perpendicular angle <EQ 17 degrees for this type of large coupled optical cavity laser has been achieved. The on-axis luminous intensity of the new mechanism 620 nm AlGaInP/AlInP LEDs with two active regions is more than 5 cd. It was theoretically and experimentally resulted in that the electro-luminescence efficiency and the on-axis luminous intensity are linearly increasing approximately with the number of the active regions.

Paper Details

Date Published: 9 October 2000
PDF: 4 pages
Proc. SPIE 4225, Optical Interconnects for Telecommunication and Data Communications, (9 October 2000); doi: 10.1117/12.402741
Show Author Affiliations
Guangdi Shen, Beijing Polytechnic Univ. (China) and Beijing Optoelectronic Technology Lab. (China)
Peng Lian, Beijing Polytechnic Univ. (China) and Beijing Optoelectronic Technology Lab. (China)
Xia Guo, Beijing Polytechnic Univ. (China) and Beijing Optoelectronic Technology Lab. (China)
Tao Yin, Beijing Polytechnic Univ. (China) and Beijing Optoelectronic Technology Lab. (China)
Changhua Chen, Beijing Polytechnic Univ. (China) and Beijing Optoelectronic Technology Lab. (China)
Guohong Wang, Beijing Polytechnic Univ. (China) and Beijing Optoelectronic Technology Lab. (China)
Jinyu Du, Beijing Polytechnic Univ. (China) and Beijing Optoelectronic Technology Lab. (China)
Bifeng Cui, Beijing Polytechnic Univ. (China) and Beijing Optoelectronic Technology Lab. (China)
Jianjun Li, Beijing Polytechnic Univ. (China) and Beijing Optoelectronic Technology Lab. (China)
Ying Liu, Beijing Polytechnic Univ. (China) and Beijing Optoelectronic Technology Lab. (China)
Guo Gao, Beijing Polytechnic Univ. (China) and Beijing Optoelectronic Technology Lab. (China)
Deshu Zou, Beijing Polytechnic Univ. (China) and Beijing Optoelectronic Technology Lab. (China)
Jianxing Chen, Beijing Polytechnic Univ. (China) and Beijing Optoelectronic Technology Lab. (China)
Xiaoyu Ma, Institute of Semiconductors (China)
Lianhui Chen, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 4225:
Optical Interconnects for Telecommunication and Data Communications
Xiaomin Ren; Suning Tang, Editor(s)

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