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Proceedings Paper

Si-based resonant-cavity-enhanced photodetector
Author(s): Qiming Wang; Cheng Li; Buwen Cheng; Qingqing Yang
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Paper Abstract

Resonant-cavity-enhanced (RCE) photodetectors have been demonstrated to be able to improve the bandwidth-efficiency product. We report one top-illumination and one bottom- illumination SiGe/Si multiple quantum-well (MQW) RCE photodetectors fabricated on a separation-by-implanted-oxygen (SIMOX) wafer operating near 1300 nm. The buried oxide layer in SIMOX is used as a mirror to form a vertical cavity with the silicon dioxide/silicon Bragg reflector deposited on the top surface. A peak responsivity with a reverse bias of 5 V is measured 10.2 mA/W at 1285 nm, and a full-width at half maximum of 25 nm for the top-illumination RCE photodetector, and 19 mA/W at 1305 nm, and a full-width at half maximum of 14 nm for the bottom-illumination one. The external quantum efficiency of the bottom-illumination RCE photodetector is up to 2.9% at 1305 nm with a reverse bias of 25 V. The responsivity of the bottom-illumination RCE photodetector is improved by two-fold compared with that of the top- illumination one.

Paper Details

Date Published: 9 October 2000
PDF: 5 pages
Proc. SPIE 4225, Optical Interconnects for Telecommunication and Data Communications, (9 October 2000); doi: 10.1117/12.402679
Show Author Affiliations
Qiming Wang, Institute of Semiconductors (China)
Cheng Li, Institute of Semiconductors (China)
Buwen Cheng, Institute of Semiconductors (China)
Qingqing Yang, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 4225:
Optical Interconnects for Telecommunication and Data Communications

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