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Proceedings Paper

La-implanted Si-based emitting film materials
Author(s): Meiling Yuan; Qingnian Wang; Yuxin Zeng; Shuifeng Wang; Fei Xu; Guoan Cheng
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Paper Abstract

The photoluminescence (PL) spectra at room temperature for monocrystal Si wafer thermal oxide Si samples doped by La ion implantation are measured. The results show that all the samples possess blue-violet photoluminescence properties under the UV light excitation and its light emission is stable. The intensity of PL peaks increases with the increasing of La ion dose during ion beam synthesis within a certain limits. Moreover, PL is closely related to the temperature of rapid thermal annealing. Besides, the feature and appearance of the samples was surveyed, with atomic force microscopy. The photoluminescence mechanisms for our samples is also discussed.

Paper Details

Date Published: 5 October 2000
PDF: 5 pages
Proc. SPIE 4223, Instruments for Optics and Optoelectronic Inspection and Control, (5 October 2000); doi: 10.1117/12.401793
Show Author Affiliations
Meiling Yuan, Nanchang Univ. (China)
Qingnian Wang, Nanchang Univ. (China)
Yuxin Zeng, Nanchang Univ. (China)
Shuifeng Wang, Nanchang Univ. (China)
Fei Xu, Nanchang Univ. (China)
Guoan Cheng, Nanchang Univ. (China)


Published in SPIE Proceedings Vol. 4223:
Instruments for Optics and Optoelectronic Inspection and Control
Guang Hui Wei; Sheng Liu, Editor(s)

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