Share Email Print
cover

Proceedings Paper

Photoluminescence spectrum measurement of GaAs photocathode material
Author(s): Hui Guo; Vitaly Pravdivtsev
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The luminescence generation mechanism of semiconductor epitaxial structure and the basic principle of photoluminescence spectrum measuring instrument are outlined in this paper. Detailed method about how to make use of the instrument to measure the doping level and composition as well as the uniformity of GaAs/GaAlAs layer is described. In the end, the effect of these parameters on the function of the III-gen photocathode is discussed.

Paper Details

Date Published: 5 October 2000
PDF: 4 pages
Proc. SPIE 4223, Instruments for Optics and Optoelectronic Inspection and Control, (5 October 2000); doi: 10.1117/12.401782
Show Author Affiliations
Hui Guo, Xi'an Institute of Applied Optics (China)
Vitaly Pravdivtsev, ITAR, Ltd. (Russia)


Published in SPIE Proceedings Vol. 4223:
Instruments for Optics and Optoelectronic Inspection and Control
Guang Hui Wei; Sheng Liu, Editor(s)

© SPIE. Terms of Use
Back to Top