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Proceedings Paper

Analysis of mechanism for the operational mode of lock-on in PCSSs
Author(s): Renxi Gong; Yimen Zhang; Shunxiang Shi; Tongyi Zhang
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Paper Abstract

An experimental and theoretical investigation of PCSS's behaviors has been performed with emphasis on 'lock-on' is intimately related to bias voltage, triggering optical energy and the concentration of deep energy level trap in PCSS's by 2D simulation with MEDICI. This effect is observed only when the three factors all satisfy corresponding threshold values that vary with operational conditions. The reason is that under such condition, the distributions of the electric field, potential, carriers and current densities in PCSS's can be notably changed, the accumulation of carriers will be formed and electric field will be gradually enhanced in some region. It ultimately reaches the critical electric field for avalanche ionization, thus avalanche multiplication of carriers occurs.

Paper Details

Date Published: 5 October 2000
PDF: 5 pages
Proc. SPIE 4223, Instruments for Optics and Optoelectronic Inspection and Control, (5 October 2000); doi: 10.1117/12.401781
Show Author Affiliations
Renxi Gong, Xidian Univ. (China)
Yimen Zhang, Xidian Univ. (China)
Shunxiang Shi, Xidian Univ. (China)
Tongyi Zhang, Xidian Univ. (China)


Published in SPIE Proceedings Vol. 4223:
Instruments for Optics and Optoelectronic Inspection and Control
Guang Hui Wei; Sheng Liu, Editor(s)

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