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Proceedings Paper

Numerical simulation of photoelectric characteristic of three-channel bulk charge-coupled device in the x-ray region
Author(s): Min Song; Yuxin Wang
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Paper Abstract

In this paper the photoelectric characteristics of the three-channel bulk charge-coupled device (BCCD) was simulated in the region of x-ray. The results show that the silicon three-channel BCCD can not work in the region of x- ray because of improper absorption coefficient of silicon. The absorption coefficient curve of a new material is given in this paper. By using the absorption coefficient of the new material, three maxim positions of the spectral photosensitivity are obtained at 1.8kev, 1.2kev and 0.6kev, respectively.

Paper Details

Date Published: 5 October 2000
PDF: 5 pages
Proc. SPIE 4223, Instruments for Optics and Optoelectronic Inspection and Control, (5 October 2000); doi: 10.1117/12.401764
Show Author Affiliations
Min Song, Liaoning Normal Univ. (China)
Yuxin Wang, Liaoning Normal Univ. (China)

Published in SPIE Proceedings Vol. 4223:
Instruments for Optics and Optoelectronic Inspection and Control
Guang Hui Wei; Sheng Liu, Editor(s)

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