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Proceedings Paper

Advanced photonic sensors of heterojunctions of TiO2/PS/p-Si
Author(s): Danzhen Li; Xianzhi Fu
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Paper Abstract

The photonics sensor with heterojunctions of TiO2/PS/p-Si was prepared by coating the nano-sized thin film of TiO2 on surface of the porous silicon substrate and was characterized by the surface photovoltage spectroscopy. The results showed that the photovoltage of porous silicon (PS/p- Si) was greatly increased two to three orders of magnitude by coating TiO2 thin film. The enhancement of photovoltage may be attributed to the efficient absorption spectrum from near infrared till ultraviolet light of the double heterojunctions of TiO2/PS/p-Si and the effective separation of the photoproduced electron-hole pairs due to the increment of the built-in electric field of the quasi- intrinsic porous silicon. Moreover, the back electric field generated by the potential difference between PS and p-Si may resist the diffusion of minority carrier toward the electrode, leading to the effective enhancement of photovoltage.

Paper Details

Date Published: 3 October 2000
PDF: 4 pages
Proc. SPIE 4220, Advanced Photonic Sensors: Technology and Applications, (3 October 2000); doi: 10.1117/12.401734
Show Author Affiliations
Danzhen Li, Fuzhou Univ. (China)
Xianzhi Fu, Fuzhou Univ. (China)


Published in SPIE Proceedings Vol. 4220:
Advanced Photonic Sensors: Technology and Applications

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