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Proceedings Paper

Correlation between the low-frequency electrical noise of high-power quantum well lasers and device quality
Author(s): Guijun Hu; Jiawei Shi; Sumei Zhang; Yu Lu; LiYun Qi; Hongyan Li; Fenggang Zhang
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Paper Abstract

The low frequency electrical noise and electric derivative (IdV/dI-I) are measured at different conditions. The correlation between the noise and device quality is discussed, the results indicate that the low frequency electrical noise of 808 nm high power semiconductor laser is mainly 1/f noise and has good relation with device quality.

Paper Details

Date Published: 3 October 2000
PDF: 4 pages
Proc. SPIE 4220, Advanced Photonic Sensors: Technology and Applications, (3 October 2000); doi: 10.1117/12.401718
Show Author Affiliations
Guijun Hu, Jilin Univ. (China)
Jiawei Shi, Jilin Univ. (China)
Sumei Zhang, Jilin Univ. (China)
Yu Lu, Jilin Univ. (China)
LiYun Qi, Jilin Univ. (China)
Hongyan Li, Jilin Univ. (China)
Fenggang Zhang, Jilin Univ. (China)


Published in SPIE Proceedings Vol. 4220:
Advanced Photonic Sensors: Technology and Applications
Jinfa Tang; Chao-Nan Xu; Haizhang Li, Editor(s)

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