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Proceedings Paper

High-power 980-nm laser arrays with nonabsorbing facets
Author(s): Yi Qu; Baoxue Bo; Baoshun Zhang; Xin Gao; Xingde Zhang; Jiawei Shi
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Paper Abstract

In this letter we report a novel 980 nm semiconductor laser array structure with nonabsorbing facets to avoid the COMD on facets. The 980 nm laser wafers are grown by MBE. Using quantum-well intermixing, we have fabricated nonabsorbing mirrors on the laser array's facets to resist COMD. The quantum intermixing process involves the deposition of a thin film (200 nm) of sputtered SiO2 and a subsequent high temperature anneal (680 - 760 degrees Celsius). The cm bars are cleaved to lengths of 1 mm and their rear and front nonabsorbing facets are coated respectively with high and low reflectivity dielectric film by electron-beam. The devices are bonded p-side up onto copper heatsinks using indium solder and mounted on a water-cooled stage which is held at 18 degrees Celsius for all experiments. The emission wavelength of the laser arrays is 980 nm. Continuous wave (CW) output power of 8 W has been achieved.

Paper Details

Date Published: 3 October 2000
PDF: 3 pages
Proc. SPIE 4220, Advanced Photonic Sensors: Technology and Applications, (3 October 2000); doi: 10.1117/12.401716
Show Author Affiliations
Yi Qu, Jilin Univ. and Changchun Institute of Optics and Fine Mechanics (China)
Baoxue Bo, Jilin Univ. and Changchun Institute of Optics and Fine Mechanics (China)
Baoshun Zhang, Changchun Institute of Optics and Fine Mechanics (China)
Xin Gao, Changchun Institute of Optics and Fine Mechanics (China)
Xingde Zhang, Changchun Institute of Optics and Fine Mechanics (China)
Jiawei Shi, Jilin Univ. (China)


Published in SPIE Proceedings Vol. 4220:
Advanced Photonic Sensors: Technology and Applications
Jinfa Tang; Chao-Nan Xu; Haizhang Li, Editor(s)

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