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Proceedings Paper

Recent studies on metalorganic vapor phase epitaxial growth of ZnTe
Author(s): Mitsuhiro Nishio; Kazuki Hayashida; Qixin Guo; Hiroshi Ogawa
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Paper Abstract

Results of our recent experiments relating to ZnTe homoepitaxial growth by atmospheric pressure metalorganic vapor phase epitaxy are described. The effects of substrate temperature, gas flow rate and VI/II ratio upon the growth rate of ZnTe layers have been investigated. The behavior of the growth rate is well explained with a simplified growth model, in which the diffusion in the boundary layer and the reaction-rate law described by Langmuir-Hinshelwood model are considered. We also deal with the results on the photoluminescence properties of ZnTe layers obtained under wide growth conditions covered from mass transport limited region to kinetically controlled one. The growth conditions close to the transition part between mass transport and surface kinetic regions led to ZnTe layer of high quality. Similar conclusion is also obtained for photo-assisted growth. Photo-assisted growth enlarges substrate temperature range for achieving ZnTe layer of good quality compared with thermal growth.

Paper Details

Date Published: 3 October 2000
PDF: 6 pages
Proc. SPIE 4220, Advanced Photonic Sensors: Technology and Applications, (3 October 2000); doi: 10.1117/12.401685
Show Author Affiliations
Mitsuhiro Nishio, Saga Univ. (Japan)
Kazuki Hayashida, Saga Univ. (Japan)
Qixin Guo, Saga Univ. (Japan)
Hiroshi Ogawa, Saga Univ. (Japan)


Published in SPIE Proceedings Vol. 4220:
Advanced Photonic Sensors: Technology and Applications
Jinfa Tang; Chao-Nan Xu; Haizhang Li, Editor(s)

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