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Proceedings Paper

Thermal annealing effects on the triboluminescence intensity of sputtered ZnS:Mn thin films
Author(s): Boateng Onwoma-Agyemann; Chao-Nan Xu; I. Usui; Xu-Guang Zheng; Morio Suzuki
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Paper Abstract

We have investigated the triboluminescence (TrL) intensities of as-grown and thermally annealed ZnS thin films doped with manganese on quartz substrates. The ZnS:Mn thin films were deposited by rf magnetron sputtering and thermally annealed in a reducing gas (5% H2/Ar) at 500 degrees Celsius, 600 degrees Celsius, 700 degrees Celsius and 800 degrees Celsius. The crystallinity and the triboluminescence intensities of the films were greatly enhanced by postannealing up to 700 degrees Celsius, accompanied by an increase in the adherent strength of the film. An X-ray diffractometer and a Scratch Adhesion Tester were used to study the crystallinity and adhesion of the as-grown and annealed films respectively. Results based on crystallographic and acoustic emission data were used to explain the failure mechanisms in the films during the triboluminescence measurement.

Paper Details

Date Published: 3 October 2000
PDF: 5 pages
Proc. SPIE 4220, Advanced Photonic Sensors: Technology and Applications, (3 October 2000); doi: 10.1117/12.401683
Show Author Affiliations
Boateng Onwoma-Agyemann, Kyushu National Industrial Research Institute and Saga Univ. (Japan)
Chao-Nan Xu, Kyushu National Industrial Research Institute (Japan)
I. Usui, Industrial Technology Ctr. of Saga (Japan)
Xu-Guang Zheng, Saga Univ. (Japan)
Morio Suzuki, Saga Univ. (Japan)


Published in SPIE Proceedings Vol. 4220:
Advanced Photonic Sensors: Technology and Applications
Jinfa Tang; Chao-Nan Xu; Haizhang Li, Editor(s)

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