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Proceedings Paper

Passive and active quenching of Si avalanche photodiodes at low temperatures
Author(s): Chuang Liang; Donghao Fu; Ling-An Wu
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Paper Abstract

Silicon avalanche photodiodes operated int he Geiger mode are capable of detecting single photons in the near infrared regime. We have designed and tested two types of quenching circuit, with a dead time of about 1 microsecond in the passive quenching mode and 60 ns in the active quenching mode. The performance of our detectors under various operating temperatures has been investigated, and measurements down to liquid nitrogen temperatures are reported for the first time.

Paper Details

Date Published: 3 October 2000
PDF: 6 pages
Proc. SPIE 4220, Advanced Photonic Sensors: Technology and Applications, (3 October 2000); doi: 10.1117/12.401674
Show Author Affiliations
Chuang Liang, Institute of Physics (China)
Donghao Fu, Graduate School of Chinese Academy of Sciences (China)
Ling-An Wu, Institute of Physics (China)


Published in SPIE Proceedings Vol. 4220:
Advanced Photonic Sensors: Technology and Applications
Jinfa Tang; Chao-Nan Xu; Haizhang Li, Editor(s)

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