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Proceedings Paper

Nano-oxidation of semiconductor heterostructures with atomic force microscopes: technology and applications
Author(s): Thomas M. Heinzel; Silvia Luescher; Andreas Fuhrer; Gian Salis; Ryan Held; Klaus Ensslin; Werner Wegscheider; Max Bichler
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Paper Abstract

Tunable nanostructures can be patterned in Ga[Al]As heterostructures with an atomic force microscope (AFM). Oxidizing the GaAs cap layer locally by applying a voltage to the AFM tip leads to depletion of the electron gas underneath the oxide. Here, we describe this type of AFM lithography as a tool to fabricate tunable nanostructures. Novel technological options are discussed, and the electronic properties of the resulting confinement is characterized. As an example for the versatility of this technique, we present electronic transport measurements on quantum wires.

Paper Details

Date Published: 29 September 2000
PDF: 13 pages
Proc. SPIE 4098, Optical Devices and Diagnostics in Materials Science, (29 September 2000); doi: 10.1117/12.401643
Show Author Affiliations
Thomas M. Heinzel, ETH Zurich (Switzerland)
Silvia Luescher, ETH Zurich (Switzerland)
Andreas Fuhrer, ETH Zurich (Switzerland)
Gian Salis, ETH Zurich (Switzerland)
Ryan Held, ETH Zurich (Switzerland)
Klaus Ensslin, ETH Zurich (Switzerland)
Werner Wegscheider, Univ. Regensburg and Technische Univ. Muenchen (Germany)
Max Bichler, Technische Univ. Muenchen (Germany)

Published in SPIE Proceedings Vol. 4098:
Optical Devices and Diagnostics in Materials Science
David L. Andrews; David L. Andrews; Toshimitsu Asakura; Suganda Jutamulia; Wiley P. Kirk; Max G. Lagally; Ravindra B. Lal; James D. Trolinger, Editor(s)

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