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Proceedings Paper

Microstructural study of silicon carbide fibers through the use of Raman microscopy
Author(s): Yanling Ward; Robert J. Young; Robert A. Shatwell
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Paper Abstract

The microstructures of three different silicon carbide (SiC) fibers produced by CVD (chemical vapor deposition) have been examined in detail using Raman microscopy. Raman spectra were mapped out across the entire cross-sections of these silicon carbide fibers using an automated x-y stage with a spatial resolution of 1 micrometers . The Raman maps clearly illustrate the variations in microstructure in such types of silicon carbide fibers. It appears that the SCS-type fibers contain carbon as well as SiC whereas the Sigma 1140+ fiber also contains free silicon. Furthermore, the differences in the detailed structures of the carbon and silicon carbide present in the fibers can also be investigated. Raman microscopy is demonstrated to be a very sensitive technique for characterizing the composition and microstructure of CVD silicon carbide fibers prepared using different processing conditions.

Paper Details

Date Published: 29 September 2000
PDF: 8 pages
Proc. SPIE 4098, Optical Devices and Diagnostics in Materials Science, (29 September 2000); doi: 10.1117/12.401630
Show Author Affiliations
Yanling Ward, Univ. of Manchester (United Kingdom)
Robert J. Young, Univ. of Manchester (United Kingdom)
Robert A. Shatwell, Defence Evaluation and Research Agency Farnborough (United Kingdom)


Published in SPIE Proceedings Vol. 4098:
Optical Devices and Diagnostics in Materials Science
David L. Andrews; David L. Andrews; Toshimitsu Asakura; Suganda Jutamulia; Wiley P. Kirk; Max G. Lagally; Ravindra B. Lal; James D. Trolinger, Editor(s)

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