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Proceedings Paper

Micro-Raman scattering and microphotoluminescence on GaN materials grown on sapphire by metalorganic vapor deposition
Author(s): Zhe Chuan Feng; W. Wang; Wei Liu; Soo-Jin Chua; Geraint A. Evans; Martin Kuball; Ken P. J. Williams; G. D. Pitt
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Paper Abstract

GaN thin film materials, un-doped, Si- and Mg-doped, have been grown on c-sapphire substrates by low pressure metalorganic chemical vapor deposition, and have been characterized by micro-Raman scattering ((mu) -RS) and micro- photoluminescence ((mu) -PL) spectroscopy. Basic Raman scattering modes, and in particular, their variations have been observed with the laser incident on the cross section of a few micron thick GaN film. Raman line shape analysis on the E2 mode is presented, based upon the spatial correlation theoretical model. Through the theoretical modeling of the LO-phonon-plasmon coupling, the free carrier concentration can be determined via Raman measurements and curve fitting. Using a newly designed and developed UV Raman-PL microscope system, room temperature PL and its variation with the SiH4 doping level for a series of n- type GaN epitaxial materials have been studied. Combined UV (mu) -RS-PL spectra from p-type GaN are also investigated.

Paper Details

Date Published: 29 September 2000
PDF: 10 pages
Proc. SPIE 4098, Optical Devices and Diagnostics in Materials Science, (29 September 2000); doi: 10.1117/12.401629
Show Author Affiliations
Zhe Chuan Feng, Institute of Materials Research and Engineering (Singapore)
W. Wang, Institute of Materials Research and Engineering (Singapore)
Wei Liu, National Univ. of Singapore (Singapore)
Soo-Jin Chua, Institute of Materials Research and Engineering and National Univ. of Singapore (Singapore)
Geraint A. Evans, Univ. of Bristol (United Kingdom)
Martin Kuball, Univ. of Bristol (United Kingdom)
Ken P. J. Williams, Renishaw plc (United Kingdom)
G. D. Pitt, Univ. of Bristol and Renishaw plc (United Kingdom)

Published in SPIE Proceedings Vol. 4098:
Optical Devices and Diagnostics in Materials Science
David L. Andrews; David L. Andrews; Toshimitsu Asakura; Suganda Jutamulia; Wiley P. Kirk; Max G. Lagally; Ravindra B. Lal; James D. Trolinger, Editor(s)

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