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Proceedings Paper

Effect of partial crystallization on formation of amorphous marks
Author(s): Kenric P. Nelson; Orlando Lopez; Michael F. Ruane
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Paper Abstract

The reflectivity of an amorphous mark on a first-surface phase-change optical storage disk is shown to vary with the level of crystallization of the GST layer. A static tester with 680-nm laser diode for writing amorphous marks and a 643-nm laser diode for monitoring the reflectivity changes is used for the experiment. An 8% difference in reflectivity is measured between the amorphous marks formed in the fully crystallized, high reflectivity (R equals 43%) state and partially crystallized, low reflectivity (R equals 30%) state.

Paper Details

Date Published: 18 September 2000
PDF: 4 pages
Proc. SPIE 4090, Optical Data Storage 2000, (18 September 2000); doi: 10.1117/12.399350
Show Author Affiliations
Kenric P. Nelson, Photrek Corp. (United States)
Orlando Lopez, Polaroid Corp. (United States)
Michael F. Ruane, Boston Univ. (United States)

Published in SPIE Proceedings Vol. 4090:
Optical Data Storage 2000
Douglas G. Stinson; Ryuichi Katayama, Editor(s)

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