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Proceedings Paper

Near-field phase-change recording using a GaN laser diode
Author(s): Koichiro Kishima; Isao Ichimura; Kenji Yamamoto; Kiyoshi Osato; Yuji Kuroda; Atsushi Iida; Kimihiro Saito
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Paper Abstract

We developed a 1.5-Numerical-Aperture optical setup using a GaN blue-violet laser diode. We used a 1.0 mm-diameter super-hemispherical solid immersion lens, and optimized a phase-change disk structure including the cover layer by the method of MTF simulation. The disk surface was polished by tape burnishing technique. An eye-pattern of (1-7)-coded data at the linear density of 80 nm/bit was demonstrated on the phase-change disk below a 50 nm gap height, which was realized through our air-gap servo mechanism.

Paper Details

Date Published: 18 September 2000
PDF: 6 pages
Proc. SPIE 4090, Optical Data Storage 2000, (18 September 2000); doi: 10.1117/12.399331
Show Author Affiliations
Koichiro Kishima, Sony Corp. (Japan)
Isao Ichimura, Sony Corp. (Japan)
Kenji Yamamoto, Sony Corp. (Japan)
Kiyoshi Osato, Sony Corp. (Japan)
Yuji Kuroda, Sony Corp. (Japan)
Atsushi Iida, Sony Corp. (Japan)
Kimihiro Saito, Sony Corp. (Japan)

Published in SPIE Proceedings Vol. 4090:
Optical Data Storage 2000
Douglas G. Stinson; Ryuichi Katayama, Editor(s)

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