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Proceedings Paper

Simultaneous measurement of bulk and surface recombination lifetimes on asymmetrical silicon samples
Author(s): Luigi Sirleto; Andrea Irace; Gianpaolo F. Vitale; Luigi Zeni; Antonello Cutolo
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Paper Abstract

In this paper, a contractless, all-optical and non-destructive method for separating the minority carrier recombination lifetime and surface recombination velocities on assymetrical silicon samples (that is with different surface recombination velocities on the front and back surface) at low injection level is presented. The technique can be described as a pump-probe method where the excess carrier density is probed by analyzing free carrier absorption transient following excitation pulses having several wavelengths. A novel theoretical approach to evaluate the recombinative parameters is extensively analyzed and numerical simulations, which validate the proposed methodology, are presented.

Paper Details

Date Published: 31 August 2000
PDF: 8 pages
Proc. SPIE 4076, Optical Diagnostics for Industrial Applications, (31 August 2000); doi: 10.1117/12.397961
Show Author Affiliations
Luigi Sirleto, Univ. degli Studi di Napoli Federico II (Italy)
Andrea Irace, Univ. degli Studi di Napoli Federico II (Italy)
Gianpaolo F. Vitale, Univ. degli Studi di Napoli Federico II (Italy)
Luigi Zeni, Seconda Univ. degli Studi di Napoli (Italy)
Antonello Cutolo, Univ. degli Studi del Sannio (Italy)

Published in SPIE Proceedings Vol. 4076:
Optical Diagnostics for Industrial Applications
Neil A. Halliwell, Editor(s)

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