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Proceedings Paper

Strontium titanate field effect heterostructures
Author(s): Ilaria Pallecchi; Giuseppe Grassano; Daniele Marre; Luca Pellegrino; Marina Putti; Antonio Sergio Siri
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Paper Abstract

Many epitaxial heterostructures of transition metal oxides with perovskite structure can be found in literature, accounting for the great interest on electronic devices based on correlated materials. Within this context, the role of traditional semiconductors (Si, Ge) can be played by SrTiO3, which can become metallic with a carrier concentration as low as 1018 cm-3 and with an electron mobility as high as 104 cm2/(V(DOT)s), comparable to the one commonly found in silicon. First, we studied the dramatic effect of oxygen deficiency on transport properties of SrTiO3-(delta ) homoepitaxial thin films deposited by Pulsed Laser Deposition (PLD) in Ultra High Vacuum (UHV) conditions. Then, we explored the feasibility of employing e-doped strontium titanate as semiconducting layer in field effect Metal-Insulator- Semiconductor (MIS) heterostructures. We deposited MIS epitaxial heterostructures, where the wide band gap insulating layer was made of MgO (Egap approximately equals 8 eV). Field effect measurements performed by an a.c. technique showed an increase in conductance up to 90% at 6 Volts of gate voltage. This promising result could open new perspectives in crystalline oxides electronics.

Paper Details

Date Published: 6 September 2000
PDF: 8 pages
Proc. SPIE 4058, Superconducting and Related Oxides: Physics and Nanoengineering IV, (6 September 2000); doi: 10.1117/12.397858
Show Author Affiliations
Ilaria Pallecchi, INFM/Univ. degli Studi di Genova (Italy)
Giuseppe Grassano, INFM/Univ. degli Studi di Genova (Italy)
Daniele Marre, INFM/Univ. degli Studi di Genova (Italy)
Luca Pellegrino, INFM/Univ. degli Studi di Genova (Italy)
Marina Putti, INFM/Univ. degli Studi di Genova (Italy)
Antonio Sergio Siri, INFM/Univ. degli Studi di Genova (Italy)


Published in SPIE Proceedings Vol. 4058:
Superconducting and Related Oxides: Physics and Nanoengineering IV
Davor Pavuna; Ivan Bozovic, Editor(s)

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