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Proceedings Paper

Investigating the ferroelectric field effect in thin NdBa2Cu3O7 films using the Hall effect
Author(s): S. Gariglio; C. H. Ahn; Jean-Marc Triscone
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Paper Abstract

We have used the reversible ferroelectric polarization of the perovskite oxide Pb(Zr0.2Ti0.8)O3 in Pb(Zr0.2Ti0.8)O3/Nd1.13Ba1.87Cu3O7-δ epitaxial heterostructures in order to electrostatically modulate the carrier concentration in thin Nd1.13Ba1.87Cu3O7 films via the ferroelectric field effect. For 100 angstrom thick Nd1.13Ba1.87Cu3O7 layers, we observe a correlated change in the normal state resistance and in the inverse Hall constant.

Paper Details

Date Published: 6 September 2000
PDF: 7 pages
Proc. SPIE 4058, Superconducting and Related Oxides: Physics and Nanoengineering IV, (6 September 2000); doi: 10.1117/12.397848
Show Author Affiliations
S. Gariglio, Univ. of Geneva (Switzerland)
C. H. Ahn, Yale Univ. (Switzerland)
Jean-Marc Triscone, Univ. of Geneva (Switzerland)


Published in SPIE Proceedings Vol. 4058:
Superconducting and Related Oxides: Physics and Nanoengineering IV
Davor Pavuna; Ivan Bozovic, Editor(s)

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