Share Email Print
cover

Proceedings Paper

Characterization of deep Si etch profiles formed by atmospheric downstream plasma
Author(s): Igor Bagriy; Oleg Siniaguine
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

A new dry etch process that is base don Atmospheric Downstream Plasma (ADP) technology has many applications for MEMS manufacturing. The atmospheric-pressure thermal plasma is created by a DC discharge through a stream of inert gas flowing between electrodes in the process chamber. The reactant gas stream flows through the plasma region, where it is decomposed into constituent monatomic gas atoms by the high temperature of the plasma. The chemical reaction of silicon with electrically neutral activated fluorine gas results in isotropic silicon removal with etch rates significantly higher than in vacuum plasmas. The results are deep ADP silicon etching using aluminum mask layers with holes ranging in size from 20 to 600 micrometers are presented. Evaluation parameters include etch rate, wafer temperature, hole depth and width, etch profile, and microloading effects. Mechanism and models os isotropic dep ADP silicon etching are discussed. As a result, design rules for masks used in bulk silicon etching using ADP are proposed.

Paper Details

Date Published: 25 August 2000
PDF: 8 pages
Proc. SPIE 4174, Micromachining and Microfabrication Process Technology VI, (25 August 2000); doi: 10.1117/12.396477
Show Author Affiliations
Igor Bagriy, Tru-Si Technologies (United States)
Oleg Siniaguine, Tru-Si Technologies (United States)


Published in SPIE Proceedings Vol. 4174:
Micromachining and Microfabrication Process Technology VI
Jean Michel Karam; John A. Yasaitis, Editor(s)

© SPIE. Terms of Use
Back to Top