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Proceedings Paper

HARM processing techniques for MEMS and MOEMS devices using bonded SOI substrates and DRIE
Author(s): Colin Gormley; Anne Boyle; Viji Srigengan; Scott C. Blackstone
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Paper Abstract

Silicon-on-Insulator (SOI) MEMS devices (1) are rapidly gaining popularity in realizing numerous solutions for MEMS, especially in the optical and inertia application fields. BCO recently developed a DRIE trench etch, utilizing the Bosch process, and refill process for high voltage dielectric isolation integrated circuits on thick SOI substrates. In this paper we present our most recently developed DRIE processes for MEMS and MOEMS devices. These advanced etch techniques are initially described and their integration with silicon bonding demonstrated. This has enabled process flows that are currently being utilized to develop optical router and filter products for fiber optics telecommunications and high precision accelerometers.

Paper Details

Date Published: 25 August 2000
PDF: 13 pages
Proc. SPIE 4174, Micromachining and Microfabrication Process Technology VI, (25 August 2000); doi: 10.1117/12.396476
Show Author Affiliations
Colin Gormley, BCO Technologies (NI) Ltd. (Ireland)
Anne Boyle, BCO Technologies (NI) Ltd. (Ireland)
Viji Srigengan, BCO Technologies (NI) Ltd. (Ireland)
Scott C. Blackstone, BCO America (United States)

Published in SPIE Proceedings Vol. 4174:
Micromachining and Microfabrication Process Technology VI
Jean Michel Karam; John A. Yasaitis, Editor(s)

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