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Proceedings Paper

Development of polysilicon films for MEMS integration with submicrometer CMOS process
Author(s): Brian L. McCarson; Benjamin Yip; Chris Reno; Jonathan Gorrell; Bishnu P. Gogoi
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Paper Abstract

Polysilicon is the most commonly used film for surface micromachined devices such as accelerometers, gyroscopes, and pressure sensors. In this study, the development of implanted polysilicon film s for surface micromachined devices is reported. These devices were developed for integration with a double level metal sub micrometers CMOS product line. For films with 5-30 k angstrom thickness, and residual stress, sheet resistance, deposition rate, and thickness uniformity were characterized as a function of deposition temperature, silane flow rate, implant dose, and anneal conditions.

Paper Details

Date Published: 25 August 2000
PDF: 9 pages
Proc. SPIE 4174, Micromachining and Microfabrication Process Technology VI, (25 August 2000); doi: 10.1117/12.396463
Show Author Affiliations
Brian L. McCarson, Motorola (United States)
Benjamin Yip, Motorola (United States)
Chris Reno, Motorola (United States)
Jonathan Gorrell, Motorola (United States)
Bishnu P. Gogoi, Motorola (United States)

Published in SPIE Proceedings Vol. 4174:
Micromachining and Microfabrication Process Technology VI
Jean Michel Karam; John A. Yasaitis, Editor(s)

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