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Proceedings Paper

IC-compatible process for pattern transfer in deep wells for integration of RF components
Author(s): Nga Phuong Pham; Pasqualina M. Sarro; Joachim N. Burghartz
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Paper Abstract

An IC-compatible process for pattern transfer in deep wells and cavities for the integration of RF components is presented. After an anisotropic wet etching step used to define the optimum position of the ground plane, structures need to be patterned on the bottom of 250-400 micrometers dep etched grooves, trenches or cavities to realize wafer- through contact holes and metal patterns. Thick positive photoresist such as AZ4562 and ma-P275 are used. Modified resist spinning procedure and soft bake process resulted in a good coverage of the etched cavities, even for the deeper ones. The effect of resist thickness and spinning procedure on coating defect density and resolution loss is investigated and optimum conditions are found. A few examples of structures realized using the process described here are shown to indicate the potential and restrictions of this process.

Paper Details

Date Published: 25 August 2000
PDF: 8 pages
Proc. SPIE 4174, Micromachining and Microfabrication Process Technology VI, (25 August 2000); doi: 10.1117/12.396458
Show Author Affiliations
Nga Phuong Pham, Delft Univ. of Technology (Netherlands)
Pasqualina M. Sarro, Delft Univ. of Technology (Netherlands)
Joachim N. Burghartz, Delft Univ. of Technology (Netherlands)

Published in SPIE Proceedings Vol. 4174:
Micromachining and Microfabrication Process Technology VI
Jean Michel Karam; John A. Yasaitis, Editor(s)

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