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Proceedings Paper

Improvement of structural stability and IR-detecting characteristics of microbolometer
Author(s): HoKwan Kang; W. H. Ha; C. W. Park; Byung-Kap Kim; Sung W. Moon; ToHoon Kim
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Paper Abstract

A rounded-shape sacrificial layer side-wall and multi-layer of IR detecting layer composed of vanadium/vanadium oxide/vanadium were demonstrated for uncooled type micro bolometer fabrication using surface micromachining in technology. The improvement of structural stability of floating micro bolometer structure was achieved by reducing supporting bridge angle up to 50 degrees. Also smoothly rounded bridge allows more efficient residual stress releasing and flatness of floating structure without distortion. The rounded side-wall shape reduces stress concentration of wall edge and was achieved by plasma treatment of sacrificial polyimide. The IR detecting characteristics was also improved by means of fabricating an IR active layer having a high TCR with low resistivity. We deposited multi-layer of vanadium oxide film as an IR detecting layer by a layer-by-layer technology, which fabricates a sandwich typed or multi-layered vanadium and vanadium oxide using conventional r.f. magneton sputtering system. We easily obtained over -2 percent/K of TCR and 1(omega) -cm of resistivity of VOx films by new deposition technique.

Paper Details

Date Published: 25 August 2000
PDF: 8 pages
Proc. SPIE 4174, Micromachining and Microfabrication Process Technology VI, (25 August 2000); doi: 10.1117/12.396452
Show Author Affiliations
HoKwan Kang, Korea Institute of Science and Technology (South Korea)
W. H. Ha, Korea Institute of Science and Technology (South Korea)
C. W. Park, Korea Institute of Science and Technology (South Korea)
Byung-Kap Kim, Korea Institute of Science and Technology (South Korea)
Sung W. Moon, Korea Institute of Science and Technology (South Korea)
ToHoon Kim, Yonsei Univ. (South Korea)


Published in SPIE Proceedings Vol. 4174:
Micromachining and Microfabrication Process Technology VI
Jean Michel Karam; John A. Yasaitis, Editor(s)

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