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Proceedings Paper

Control of internal stress in SMA/Si bimorph microactuators
Author(s): Li Wang; Dong Xu; Bingchu Cai; Xiulan Cheng
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Paper Abstract

The internal stress in SMA/Si bimorph structure was investigate din this paper. The shape memory alloy (SMA) thin films were sputter-deposited onto single crystal silicon substrates at room temperature and thin annealed at high temperature for crystallization. The internal stresses in SMA films before and after crystallization were measured by substrate-curvature method based on S. Timoshenko's theory. The results show that the internal stress changes from compressive to tensile after film crystallization. The intrinsic stress in the sputter-deposited SMA films is almost relaxed completely during the crystallization annealing and the internal stress in crystallized SMA film is dominated by thermal stress. By varying the sputtering power during deposition, the interface status and intrinsic stress can be controlled and excellent SMA/Si bimorph actuation structure can be obtained.

Paper Details

Date Published: 25 August 2000
PDF: 6 pages
Proc. SPIE 4174, Micromachining and Microfabrication Process Technology VI, (25 August 2000); doi: 10.1117/12.396451
Show Author Affiliations
Li Wang, Shanghai Jiao Tong Univ. (China)
Dong Xu, Shanghai Jiao Tong Univ. (China)
Bingchu Cai, Shanghai Jiao Tong Univ. (China)
Xiulan Cheng, Shanghai Jiao Tong Univ. (China)

Published in SPIE Proceedings Vol. 4174:
Micromachining and Microfabrication Process Technology VI
Jean Michel Karam; John A. Yasaitis, Editor(s)

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