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Proceedings Paper

Application of a silicon-enriched nitride diaphragm to a condenser microphone
Author(s): Norisato Shimizu; Akihisa Yoshida; Masaharu Ikeda; Shinichiro Aoki
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Paper Abstract

LSI process compatible materials are important in the MEMS field. To add on MEMS fabrication processes after circuit fabrication, it is necessary the process temperature must be kept less than about 350 degrees C. The stress control of the film is also important for actual devices. The individual silicon enriched nitride (SEN) film has been developed, and the film properties have been clarified. The deposition temperature of SEN film is 250 degrees C, and that temperature is enough low to perform deposition process after LSI fabrication. The stress of SEN film is proportional to H2 gas flow, and it can be controlled from tensile stress of 30 MPa to compressive stress of 360 MPa. It is thought that the SEN film stress depends on the hydrogen content. The deposition rate and buffered HF etching rate also depend on H2 gas flow. From the RBS analysis, the composition ratio of Si/N is about 2.1. The SEN film is adopted to a condenser microphone. The membrane profile is well controlled by using tensile stressed SEN film. The sensitivity of fabricated microphone increased 0.5 mV/Pa in the half area diaphragm. The noise level is also improved over 12 dBSPL.

Paper Details

Date Published: 25 August 2000
PDF: 8 pages
Proc. SPIE 4174, Micromachining and Microfabrication Process Technology VI, (25 August 2000); doi: 10.1117/12.396448
Show Author Affiliations
Norisato Shimizu, Matsushita Electric Industrial Co., Ltd. (Japan)
Akihisa Yoshida, Matsushita Electric Industrial Co., Ltd. (Japan)
Masaharu Ikeda, Matsushita Communication Industrial Co., Ltd. (Japan)
Shinichiro Aoki, Matsushita Electric Industrial Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 4174:
Micromachining and Microfabrication Process Technology VI
Jean Michel Karam; John A. Yasaitis, Editor(s)

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