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Proceedings Paper

Low-temperature piezoelectric aluminum nitride thin film
Author(s): Laurie Valbin; Laure Sevely; Serge Spirkovitch
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Paper Abstract

AlN films were deposited on Si(100), and Al/SiO2/Si substrates by reactive Direct Current (DC) magnetron sputtering of an Al target, under different conditions of substrate temperature, pressure, N2/N2 + Ar ratio. The film properties were investigated by X-ray Diffraction, scanning electron microscopy and atomic force microscopy. Deposition rates in the range of 1.2 to 1.8 micrometers /h were obtained, the film grain size was around 40nm. To fabricate test structures, wet chemical etching was developed to etch AlN with a good selectivity respect to Al and Si. Visual aspect and surface roughness show that the maximum temperature must be less than 300 degrees C. X-ray diffraction together with dielectric constant measurement show that films are better oriented on Si(100) than on Al/Si(100).

Paper Details

Date Published: 25 August 2000
PDF: 10 pages
Proc. SPIE 4174, Micromachining and Microfabrication Process Technology VI, (25 August 2000); doi: 10.1117/12.396425
Show Author Affiliations
Laurie Valbin, Groupe ESIEE Paris (France)
Laure Sevely, Groupe ESIEE Paris (France)
Serge Spirkovitch, Groupe ESIEE Paris (France)


Published in SPIE Proceedings Vol. 4174:
Micromachining and Microfabrication Process Technology VI
Jean Michel Karam; John A. Yasaitis, Editor(s)

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