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Proceedings Paper

Development of TMAH anisotropic etching manufacturing process for MEMS
Author(s): Jiunn-Jye Tsaur; Shih-I Yang; Chen-Hsun Du; Zhongshen Lin; Cheng-Tang Huang; Cheng-Kuo Lee
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Paper Abstract

An investigation on the influence of etchant concentration, dissolving silicon content and additives during silicon anisotropic etching in TMAH has been carried out. Based on the Taguchi method, the etch rates of Si, Al, and SiO2 were measured via under-etch experiments using the wagon- wheel mask pattern. The improvement on the surface quality was observed by agitating solution under ultrasonic vibration in TMAH solutions with additives. Furthermore, a new approach is developed to reduce wet etching time and to control etched gap depth between the released micro membrane and the silicon substrate. This method employs a polysilicon or an amorphous silicon thin layer embedded between the micro membrane and silicon substrate as a sacrificial layer, then this layer would be fast iso tropically etched away by TMAH solution.

Paper Details

Date Published: 25 August 2000
PDF: 12 pages
Proc. SPIE 4174, Micromachining and Microfabrication Process Technology VI, (25 August 2000); doi: 10.1117/12.396424
Show Author Affiliations
Jiunn-Jye Tsaur, Metrodyne Microsystems Corp. (Japan)
Shih-I Yang, Metrodyne Microsystems Corp. (Taiwan)
Chen-Hsun Du, Metrodyne Microsystems Corp. (Taiwan)
Zhongshen Lin, Metrodyne Microsystems Corp. (Taiwan)
Cheng-Tang Huang, Metrodyne Microsystems Corp. (Taiwan)
Cheng-Kuo Lee, Metrodyne Microsystems Corp. (Taiwan)

Published in SPIE Proceedings Vol. 4174:
Micromachining and Microfabrication Process Technology VI
Jean Michel Karam; John A. Yasaitis, Editor(s)

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