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Proceedings Paper

MEEF measurement and model verification for 0.3-k1 lithography
Author(s): Colin R. Parker; Michael T. Reilly
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Paper Abstract

The concept of Mask Error Enhancement Factor (MEEF) is introduced its impact on the future of semiconductor fabrication is explained. The effects of numerical aperture, print bias, and exposure conditions of MEEF are explored using both theoretical and experimental methods.

Paper Details

Date Published: 18 August 2000
PDF: 8 pages
Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); doi: 10.1117/12.395749
Show Author Affiliations
Colin R. Parker, Shipley Co. (United States)
Michael T. Reilly, Shipley Co. (United States)

Published in SPIE Proceedings Vol. 4181:
Challenges in Process Integration and Device Technology
David Burnett; Shin'ichiro Kimura; Bhanwar Singh, Editor(s)

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