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Influence of the varyband layer of the amorphous hydrogenated silicon-germanium on the current-volt characteristics of the n+(a-Si:H)-i(a-Si1-xGex:H)-n+(a-Si:H)-structures
Author(s): Rustam R. Kabulov
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Paper Abstract

IN the present work are investigated the current-volt characteristics of the symmetric n+(a-Si:H)-i(a-Si:H)- n+(a-Si:H), n+(a-Si:H)-i(a-Si1-xGex:H)- n+(a-Si:H)-structures, where i-a-Si1-xGex:H is x equals 0.57, Eg equals 1.35 eV, and n+(a-Si:H)-i(a-Si1-xGex:H)- n+(a-Si:H)-structures with varyband i(a-Si1-xGex:H) layer, where Eg of the layer varied from Eg(a-Si:H) equals 1.75 eV up to Eg(a-SixGex:H) equals 1.35eV. The varyband layer in n+-i-n+- structure creates the internal built-in field Ebuiltequals (Delta) (Epsilon) c/(q*(Delta) x), which is the additional internal built-in potential for the electrons Ebuilt equals 0.32 eV. Additional increase of the electrical field, for the account Ebuilt, in varyband layers results in increase of the currents. It corresponds to more increase of injected current in the varyband structure in comparison with non varyband at V > 0.15 Volt. In the field of voltage V > 0.5-1.0 Volt the dependence J-Vm for all n+-i-n+-structures is executed, so for the symmetric structure m equals 2.8, for the varyband structure at the direct displacement m equals 3.6 and at return m equals 1.3.

Paper Details

Date Published: 18 August 2000
PDF: 6 pages
Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); doi: 10.1117/12.395742
Show Author Affiliations
Rustam R. Kabulov, Physical-Technical Institute (Uzbekistan)

Published in SPIE Proceedings Vol. 4181:
Challenges in Process Integration and Device Technology
David Burnett; Shin'ichiro Kimura; Bhanwar Singh, Editor(s)

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