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Proceedings Paper

Increasing degree of homogeneity of electrical parameters of neutron-transmuted silicon
Author(s): Shermakhmat Makhkamov; Nigmatilla A. Tursunov; Maripjon Ashurov; Zokirkhon M. Khakimov
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Paper Abstract

In order to increase the radial homogeneity of resistivity and life-time of minority carriers of monocrystalline silicon doped by neutron-transmutation it is suggested an approach based on the accounting of geometric size of samples and conditions of post- irradiation thermal processing. The studies have shown that reduction of thickness of wafers leads to improvement of homogeneity, and that life-time of minority carries strongly depends on the cooling rate, increasing with decrease of this rate. Here the surface of silicon wafers with mechanical imperfections act as efficient gutters for recombination-active centers, where thermally stimulated diffusion of defects from the bulk to the surface plays crucial role, requiring longer thermal processing for thicker wafers.

Paper Details

Date Published: 18 August 2000
PDF: 4 pages
Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); doi: 10.1117/12.395740
Show Author Affiliations
Shermakhmat Makhkamov, Institute of Nuclear Physics (Uzbekistan)
Nigmatilla A. Tursunov, Institute of Nuclear Physics (Uzbekistan)
Maripjon Ashurov, Institute of Nuclear Physics (Uzbekistan)
Zokirkhon M. Khakimov, Institute of Nuclear Physics (Uzbekistan)


Published in SPIE Proceedings Vol. 4181:
Challenges in Process Integration and Device Technology
David Burnett; Shin'ichiro Kimura; Bhanwar Singh, Editor(s)

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