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Proceedings Paper

Evaluation of Schottky contact parameters in MSM-photodiode structures
Author(s): Stanislav V. Averine; Yuen Chuen Chan; Yee Loy Lam
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Paper Abstract

The electrical behavior of metal-semiconductor-metal (MSM) Schottky barrier photodiode structures is analyzed by means of current-voltage (I-V) measurements at different temperatures. The reverse characteristics of the Schottky contact are examined by taking into account the barrier height dependence on the electric field and tunneling through the barrier. It is shown that, under these conditions the I-V measurements can be used as a fast and simple method to evaluate the barrier height, saturation current density and junction ideal factor of the MSM-photodiode Schottky contact. The results are well consistent with experiment.

Paper Details

Date Published: 18 August 2000
PDF: 6 pages
Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); doi: 10.1117/12.395733
Show Author Affiliations
Stanislav V. Averine, Nanyang Technological Univ. (Singapore)
Yuen Chuen Chan, Nanyang Technological Univ. (Singapore)
Yee Loy Lam, Nanyang Technological Univ. (Singapore)


Published in SPIE Proceedings Vol. 4181:
Challenges in Process Integration and Device Technology
David Burnett; Shin'ichiro Kimura; Bhanwar Singh, Editor(s)

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