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Proceedings Paper

Correlation between the reliability of ultrathin ISSG SiO2 and hydrogen content
Author(s): Tien-Ying Luo; Husam N. Al-Shareef; George A. Brown; Michael A. Laughery; Victor H. C. Watt; Arun Karamcheti; Mike D. Jackson; Howard R. Huff
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Paper Abstract

The electrical characteristics of NMOS capacitors fabricated using high quality, ultra-thin SiO2, grown by in-situ steam generation (SSG) in a rapid thermal processing system, and a clustered amorphous SI gate electrode is reported. The results show that, in addition to the enhanced growth rate of ISSG oxides, the lower stress-induced leakage current and significantly improved reliability of ISSG SiO2 such as a longer time-to-breakdown characteristics, as compared to SiO2, such as a longer time-to-breakdown under a constant voltage stress and larger charge-to-breakdown characteristics, as compared to SiO(subscript 2 of similar equivalent oxide thickness grown by rapid thermal oxidation (RTO). In addition, it is also found that the reliability of ISSG oxide is considerably improved as the H2 percentage increases. The result of Fourier- transformed IR spectroscopy indicates that ISSG oxides exhibit lower compressive strain than RTO oxides. Such appreciably improved reliability of ISSG oxide and reduced compressive strain may be explained by the reduction of defects within the structural transition layer between SiO2 and Si substrate, such as weak Si-Si bonds and strained Si-O bonds, by highly reactive oxygen atom s which are hypothesized to be dissociated from the molecular oxygen due to the presence of hydrogen.

Paper Details

Date Published: 18 August 2000
PDF: 12 pages
Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); doi: 10.1117/12.395732
Show Author Affiliations
Tien-Ying Luo, Univ of Texas at Austin and International SEMATECH (United States)
Husam N. Al-Shareef, International SEMATECH (United States)
George A. Brown, International SEMATECH (United States)
Michael A. Laughery, International SEMATECH (United States)
Victor H. C. Watt, International SEMATECH (United States)
Arun Karamcheti, International SEMATECH (United States)
Mike D. Jackson, International SEMATECH (United States)
Howard R. Huff, International SEMATECH (United States)


Published in SPIE Proceedings Vol. 4181:
Challenges in Process Integration and Device Technology
David Burnett; Shin'ichiro Kimura; Bhanwar Singh, Editor(s)

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