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Proceedings Paper

Effect of stress and dopant redistribution on trench-isolated narrow devices
Author(s): Gregory S. Scott; Faran Nouri; Mark E. Rubin; Martin Manley; Peter Stolk
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Paper Abstract

One of the challenges of scaling Shallow Trench Isolation (STI) is controlling the Vt and Idsat of narrow devices. In this paper, we show that Idsat of narrow devices is strongly affected by changes in mobility due to stress from the trench edge. We also show that Vt and leakage of narrow devices is controlled by dopant re-distribution in the channel caused by TED and boron segregation to the trench sidewalls.

Paper Details

Date Published: 18 August 2000
PDF: 8 pages
Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); doi: 10.1117/12.395728
Show Author Affiliations
Gregory S. Scott, Philips Semiconductors (United States)
Faran Nouri, Philips Semiconductors (United States)
Mark E. Rubin, Philips Semiconductors (United States)
Martin Manley, Philips Semiconductors (United States)
Peter Stolk, Philips Research Labs. (United States)

Published in SPIE Proceedings Vol. 4181:
Challenges in Process Integration and Device Technology
David Burnett; Shin'ichiro Kimura; Bhanwar Singh, Editor(s)

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