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Proceedings Paper

Modeling of the removal rate in chemical mechanical polishing
Author(s): Van H. Nguyen; Frank G. Shi
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Paper Abstract

A new model for the rate of material removal in chemical mechanical polishing has been developed. It is, for the first time, demonstrated that there is a critical pressure resulted from the interaction between the slurry and the pad. The critical pressure can either be positive upward exerted on the wafer or negative downward sucking on the wafer. Moreover, the critical pressure is shown to depend on the relative velocity between the wafer and the pad, the viscosity of the slurry and the pad surface. The removal rate at zero applied load can be significant in the case of a negative downward critical pressure. On the other hand, in the case of a positive upward critical pressure, the CMP removal will not occur until the applied load becomes larger than the critical one.

Paper Details

Date Published: 18 August 2000
PDF: 7 pages
Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); doi: 10.1117/12.395725
Show Author Affiliations
Van H. Nguyen, Univ. of California/Irvine (United States)
Frank G. Shi, Univ. of California/Irvine (United States)

Published in SPIE Proceedings Vol. 4181:
Challenges in Process Integration and Device Technology
David Burnett; Shin'ichiro Kimura; Bhanwar Singh, Editor(s)

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