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Proceedings Paper

Etching characteristics of organic low-k dielectrics in the helicon-wave plasma etcher for 0.15-um damascene architecture
Author(s): Jia-Min Shieh; T. C. Wei; C. H. Liu; Shich-Chang Suen; Bau-Tong Dai
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Paper Abstract

The comparative analysis of the dry etching of FLARE 2.0 and a- C:F, which represent two different depositions techniques of organic low-k polymers was investigated. In our damascene architecture, the etchings to player or hard-mask of both SIOF; SiO2 was studied. Especially, the SiOF providing lower dielectric constant than SIO2 would reduce entire effective dielectric constant. The etch rate and etching rate selectivity was optimized by changing content ratio between CHF3, N2 and O2. Furthermore, the bias power, RF power; and gas flows were changed to control the etch profile. The SEM result showed that the better etch profile can be obtained at higher bias power. There were some deviation between etching rate of blanket with the case of patterned wafer. The distribution density of the reactant etching gas in sub-um gap different from blanket surface of wafer was major dynamics. Due to this phenomena, the etching rate became nonlinear function of process time Tetch in the trenches/vias with smaller dimension.

Paper Details

Date Published: 18 August 2000
PDF: 9 pages
Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); doi: 10.1117/12.395724
Show Author Affiliations
Jia-Min Shieh, National Nano Device Labs. (Taiwan)
T. C. Wei, Chung Yuan Univ. (Taiwan)
C. H. Liu, Chung Yuan Univ. (Taiwan)
Shich-Chang Suen, National Nano Device Labs. (Taiwan)
Bau-Tong Dai, National Nano Device Labs. (Taiwan)

Published in SPIE Proceedings Vol. 4181:
Challenges in Process Integration and Device Technology
David Burnett; Shin'ichiro Kimura; Bhanwar Singh, Editor(s)

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