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Proceedings Paper

Planarization approaches to via-first dual-damascene processing
Author(s): Edward K. Pavelchek; Marjorie Cernigliaro; Peter Trefonas; Manuel doCanto
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Paper Abstract

Via fill and intervia coverage of AR5 and AR7 anti-reflectants were measured for 608nm deep vias in thermal oxide. Fitting functions were found which gave god agreement with experimental data. The most important factors were AR thickness, via duty ratio and via width. The importance of these factors was different for via fill and intervia coverage, and for AR5 and AR7. AR7 was found to fill a range of vias to a depth of 25 percent to 50 percent, suitable for a partial planarization approach to dual damascene fabrication. Planarization was shown to be relatively insensitive to several coat process variations, but sensitive to solution surface tension.

Paper Details

Date Published: 18 August 2000
PDF: 12 pages
Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); doi: 10.1117/12.395723
Show Author Affiliations
Edward K. Pavelchek, Shipley Co. (United States)
Marjorie Cernigliaro, Shipley Co. (United States)
Peter Trefonas, Shipley Co. (United States)
Manuel doCanto, Shipley Co. (United States)


Published in SPIE Proceedings Vol. 4181:
Challenges in Process Integration and Device Technology
David Burnett; Shin'ichiro Kimura; Bhanwar Singh, Editor(s)

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