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Proceedings Paper

Subwavelength optical lithography
Author(s): Tsuneo Terasawa
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Paper Abstract

Production of fine features is vital for increasing integration degree of ultra-large scale integrated (ULSI) devices. Although optical lithography has been widely used for mass-production of ULSIs, the conventional method which utilize large numerical aperture lens and short wavelength exposure is limited by lens manufacturing and narrow depth of focus. To overcome this limit, several resolution enhancement techniques (RETs) have been required and proposed. The RETs include various types of phase shift mask, off-axis illumination, the pupil filtering techniques, and associated techniques. Optical proximity effect correction technique has also been developed to apply these RETs effectively, especially in the sub-wavelength optical lithography. This paper introduces typical RETs with potential and discusses the imaging characteristics of those techniques comparing with conventional binary mask technique.

Paper Details

Date Published: 18 August 2000
PDF: 9 pages
Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); doi: 10.1117/12.395721
Show Author Affiliations
Tsuneo Terasawa, Hitachi, Ltd. (Japan)


Published in SPIE Proceedings Vol. 4181:
Challenges in Process Integration and Device Technology
David Burnett; Shin'ichiro Kimura; Bhanwar Singh, Editor(s)

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