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Proceedings Paper

Experimental one- and two-dimensional mechanical stress characterization of silicon microsystems using micro-Raman spectroscopy
Author(s): W. Merlijn van Spengen; Ingrid De Wolf; Roy Knechtel
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Paper Abstract

In this paper, the capabilities and problems if micro-Raman spectroscopy are discussed for measuring local mechanical stress, both in mono- crystalline and poly-crystalline silicon microstructures. The possibilities of this technique are demonstrated for two different MEMS: the crystalline Si membrane of a pressure sensor and a poly-crystalline Si beam. For both MEMS, an auto-focus Raman system was used. The stress in the membrane of the pressure sensor was investigated before and after bonding of the Si wafer containing the sensors to a glass substrate. This bonding resulted in an under-pressure in the sensor, deflecting the membrane inwardly. Raman spectra were measured from the top surface and the bottom surface of the membrane. This resulted in a map of the stress distribution. It indicates, for the top surface, tensile stress near the edges, compressive stress in the center, and hardly any stress at the corners. The stress in the poly-crystalline Si beam was measured using two different wavelengths of the laser beam. The results show a local tensile stress distribution along the length of the beam.

Paper Details

Date Published: 11 August 2000
PDF: 8 pages
Proc. SPIE 4175, Materials and Device Characterization in Micromachining III, (11 August 2000); doi: 10.1117/12.395600
Show Author Affiliations
W. Merlijn van Spengen, IMEC (Belgium) and Katholieke Univ. Leuven (Belgium)
Ingrid De Wolf, IMEC (Belgium)
Roy Knechtel, X-FAB Gesellschaft zur Fertigung von Wafern GmbH (Germany)

Published in SPIE Proceedings Vol. 4175:
Materials and Device Characterization in Micromachining III
Yuli Vladimirsky; Philip J. Coane, Editor(s)

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