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Proceedings Paper

Nearly single-mode high-density two-dimensional vertical-cavity surface-emitting laser arrays for optical communications
Author(s): Hung-Pin D. Yang; Mei-Li Wang; Wen-Chang Jiang; Yeung-Sy Su; Chia-Pin Sung
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Paper Abstract

We have made AlGaAs/GaAs gain-guided two-dimensional (8x8 and 4x4) vertical-cavity surface-emitting laser array in the 850-nm rage for optical communication applications. Higher optical power with nearly single transverse mode output can be achieved by using high-density two-dimensional VCSEL arrays with smaller emitting element windows (<EQ 5(mu) m). The distributed Bragg reflectors (DBRs) of the VCSELs consist of A10.12Ga0.88As/AlAs quarter-wave stacks. The GRINSCH active region is consisted of an undoped three- quantum well GaAs/Al0.3Ga0.7As and two undoped linearly graded AlxGa1-xAs confinement layers. The emitting windows of the individual VCSEL elements are 5 (mu) mx4 (mu) m. A high cw optical power of 15.3 mW was measured for a 8x8 array, with a maximum pulsed optical power of 28 mW at 160 mA. The spectrum of the VCSEL array showed single transverse mode characteristics. The near-field characteristics of the arrays were measured. Almost all the VCSEL elements emitted TEM00 mode. The modulation characteristics of the VCSEL arrays were also measured at different operating current.

Paper Details

Date Published: 11 July 2000
PDF: 8 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392194
Show Author Affiliations
Hung-Pin D. Yang, Industrial Technology Research Institute (Taiwan)
Mei-Li Wang, Industrial Technology Research Institute (Taiwan)
Wen-Chang Jiang, Industrial Technology Research Institute (Taiwan)
Yeung-Sy Su, Industrial Technology Research Institute (Taiwan)
Chia-Pin Sung, Industrial Technology Research Institute (Taiwan)

Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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