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Proceedings Paper

Temperature-dependent optical properties of InGaN semiconductor materials: experimental and numerical studies
Author(s): Yen-Kuang Kuo; JihYuan Chang; KuoKai Horng; YaLien Huang; Yuni Chang; HsuChing Huang
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Paper Abstract

The InGaN semiconductor materials have important applications in short-wavelength light emitting diodes and semiconductor lasers. In this work, we study the optical properties of a single quantum well and a multiple quantum well InGaN devices experimentally with a photoluminescence measurement system and numerically wiht a commercial Lastip simulation program. Important optical parameters such as the peak wavelength, the emission intensity, and the bandwidth of the photoluminescence spectra at various temperatures and pump power levels are characterized and compared to the results obtained from the Lastip numerical simulation. The effects of the indium concentration in quantum well, the well width, and the bowing parameter on the optical properties of the InGaN quantum well structures are also studied numerically with the Lastip simulation program. Good agreement between the experimental and numerical results is observed.

Paper Details

Date Published: 11 July 2000
PDF: 8 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392191
Show Author Affiliations
Yen-Kuang Kuo, National Changhua Univ. of Education (Taiwan)
JihYuan Chang, National Changhua Univ. of Education (Taiwan)
KuoKai Horng, National Changhua Univ. of Education (Taiwan)
YaLien Huang, National Changhua Univ. of Education (Taiwan)
Yuni Chang, National Changhua Univ. of Education (Taiwan)
HsuChing Huang, National Changhua Univ. of Education (Taiwan)


Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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